2SA1213 datasheet(1/3 Pages) SECOS

Part #	2SA1213

Description	PNP Silicon Medium Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 3 page

Any changing of specification will not be informed individual

2SA1213

PNP Silicon

Medium Power Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

*Features

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Min

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

2.900

0.900

Max

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

3.100

1.100

Min

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.114

0.035

Max

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

0.122

0.043

Dimensions In Millimeters

Dimensions In Inches

0.060TYP

1.500TYP

D

D1

C

A

b

b1

e

e1

SOT-89

1.BASE

2.COLLECTOR

3.EMITTER

ELECTRICAL

CHARACTERISTICS

Tamb=25

¥

unless

otherwise

specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100μA ， IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA , IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA， IC=0

-5

　　V

Collector cut-off current

ICBO

VCB=-50 V , IE=0

-0.1

　μA

Emitter cut-off current

IEBO

VEB=-5 V ,

IC=0

-0.1

　μA

hFE 1

VCE=-2V, IC= -0.5A

70

240

DC current gain

hFE 2

VCE=-2V, IC=-2A

20

Collector-emitter saturation voltage

VCEsat

IC=-1A, IB= -0.05A

-0.5

V

Base-emitter saturation voltage

VBEsat

IC=-1A, IB= -0.05A

-1.2

V

Transition frequency

f T

VCE= -2V, IC=-0.5A

100

MHz

CLASSIFICATION OF hFE

Ｏ　

Ｙ　

７０－１４０　

１２０－２４０　

Marking

NO、NY

Low power dissipation 0.5W

*Stucture

Epitaxial planar type.

PNP silicon transistor.

Collector Current -2A

01-Jun-2002 Rev. A

Page 1 of 3

Similar Part No. - 2SA1213

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SA1213	203Kb / 4P	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
Toshiba Semiconductor	2SA1213	200Kb / 5P	Power Amplifier Applications Power Switching Applications
TRANSYS Electronics Lim...	2SA1213	66Kb / 1P	Plastic-Encapsulated Transistors
Toshiba Semiconductor	2SA1213	169Kb / 5P	Power Amplifier Applications Power Switching Applications
Guangdong Kexin Industr...	2SA1213	501Kb / 3P	Power Switching Applications

More results

Similar Description - 2SA1213

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	2N5195	61Kb / 5P	MEDIUM POWER PNP SILICON TRANSISTOR Jun-1997
STMicroelectronics	2N5195	122Kb / 5P	MEDIUM POWER PNP SILICON TRANSISTOR Dec-2000
Microsemi Corporation	2N6193	58Kb / 2P	PNP MEDIUM POWER SILICON TRANSISTOR
SeCoS Halbleitertechnol...	2SB1132	162Kb / 3P	PNP Silicon Medium Power Transistor
	2SB1188	638Kb / 2P	PNP Silicon Medium Power Transistor
	2SB772Q	86Kb / 2P	PNP Silicon Medium Power Transistor
	BCP53	303Kb / 2P	PNP Silicon Medium Power Transistor
	2SB1132	177Kb / 3P	PNP Silicon Medium Power Transistor
	2SB1188	343Kb / 2P	PNP Silicon Medium Power Transistor
	2SA94-C	259Kb / 2P	PNP Silicon Medium Power Transistor

More results

2SA1213 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SA1213 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - 2SA1213

Similar Description - 2SA1213

Html Pages

1 2 3

Datasheet Download

Link URL