2SC3279 datasheet(1/2 Pages) SECOS

Part #	2SC3279

Description	NPN Transistor Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46+0.1

–0.1

0.43+0.08

–0.07

1

3

2

1: Emitter

2: Collector

3: Base

1.25–0.2

+0.2

URES

High DC current gain and excellent hFE linearity

Low saturation voltage

FEAT

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

Parameter

Symbol

Value

Units

01-Jun-2002 Rev. A

Page 1 of 2

TO-92

2SC3279

NPN Transistor

Plastic-Encapsulate Transistors

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

10

V

Emitter-Base Voltage

VEBO

6

V

Collector Current Continuous

IC

2

A

Collector Power Dissipation

PC

750

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 1mA, IE = 0

30

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10mA, IB = 0

10

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 1mA, IC = 0

6

V

Collector Cut-off Current

ICBO

VCB = 30V, IE = 0

0.1

A

Emitter Cut-off Current

IEBO

VEB = 6V, IC = 0

0.1

A

DC Current Gain

hFE

VCE = 1V, IC = 0.5A

140

600

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 2A, IB = 100mA

0.82

V

Base-Emitter Voltage

VBE

IC = 2A, VCE = 1V

1.5

V

Collector Power Dissipation

Cob

VCB = 10V, IE = 0, f = 1MHz

27

pF

Transition Frequency

fT

VCE = 1V, IC = 0.5A

150

MHz

CLASSIFICATION OF hFE

Rank

L

M

N

P

Range

140-240

200-330

300-450

420-600

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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