2SD1664 datasheet(1/3 Pages) SECOS

Part #	2SD1664

Description	NPN Silicon General Purpose Transistor

PDF	3 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 3 page

Any changing of specification will not be informed individual

2SD1664

NPN Silicon

General Purpose Transistor

1

2

3

R o H S C o m p lia n t P ro d u c t

01-Jun-2002 Rev. A

Page 1 of 3

Parameter

Symbol

Test Conditions

MIN

MAX

UNIT

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Features

Power dissipation

PCM : 0.5 W (Tamb= 25

oC)

Collector current

ICM

: 1 A

Collector-base voltage

V(BR)CBO : 40 V

Operating & Storage junction Temperature

Tj, Tstg : -55 C~ +150 C

OO

Electrical Characteristics( Tamb=25OC unless otherwise specified)

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Min

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

2.900

0.900

Max

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

3.100

1.100

Min

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.114

0.035

Max

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

0.122

0.043

Dimensions In Millimeters

Dimensions In Inches

0.060TYP

1.500TYP

D

D1

C

A

b

b1

e

e1

SOT-89

1.BASE

2.COLLECTOR

3.EMITTER

Collector-base breakdown voltage

V(BR)CBO

Ic= 50

A IE=0

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA IB=0

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50 A IC=0

V

Collector cut-off current

ICBO

VCB= 20 V, IE=0

A

Emitter cut-off current

IEBO

VEB=4V, IC=0

A

hFE

VCE=3V, IC= 0.1A

82

DC current gain

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB= 50mA

0.4

V

Transition frequency

fT

VCE=5V , IC= 50mA

f=1MHz

MHz

Output Capacitance

Cob

VCB= 10V, IE= 0

f=1MHz

pF

TYP

150

15

40

32

5

390

0.5

Rank

P

Q

Range

Marking

R

DAP

DAQ

DAR

Classification of hFE

82-180

120-270

180-390

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