Elektronische Bauelemente

SST6301K

N-Channel Enhancement Mode Power Mos.FET

Absolute Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current

Ω

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient (Max)

mA

V

V

mA

30

16

950

640

500

1.2

01

mA

/W

C

W / C

C

W

Tj, Tstg

Rthj-a

±

0.

110

-55~+150

3

3

3

1,2

o

o

o

C

o

C

o

C

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Parameter

Symbol

Ratings

Unit

01-Jun-2002 Rev. A

Page 1 of

4

0.25

Dimensions in millimeters

2.60

3.00

0.3

0

0.55

2.70

3.

10

0

0~0.1

1.20Ref.

0.37Ref.

0.20

1.40

1.80

0.

60 Ref.

o

10

o

SOT-26

G1

S2

G2

D1

S1

D2

301E

Date Code

1

5

2

3

4

6

Description

The SST6301K utiltzed advance processing techniques to achieve the lowest

* Simple Drive Requirement

The SST6301K is universally used for all commercial-industrial applications.

possible on-resistance, extermely efficient and cost-effectiveness device.

Features

* RoHS Compliant

* Small Package Outline

D1

G1

S1

D2

S2

G2