Elektronische Bauelemente

STT2604

5.5

N-Channel Enhancement Mode Power Mos.FET

Ω

Description

The STT2604 utiltzed advance processing techniques to achieve the lowest

possible on-resistance, extermely efficient and cost-effectiveness device.

Features

* Lower Gate Charge

* Fast Switching Characteristic

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

* Small Footprint & Low Profile Package

The STT2604 is universally used for all commercial-industrial applications.

01-Jun-2002 Rev. A

Page 1 of 4

D

D

G

D

D

S

260 4

Date Code

1

5

2

3

4

6

G

D

S

Drain-Source Voltage

W/ C

C

o

o

0.016

20

5.5

4.4

2

-55~+150

3

20

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

Pulsed Drain Current

Total Power Dissipation

1,2

C

o

C

o

C

o

Thermal Data

Thermal Resistance Junction-case

/W

C

Rthj-c

62.5

Max.

o

Gate-Source Voltage

Parameter

Symbol

Ratings

Unit

Parameter

Symbol

Ratings

Unit

A

V

V

A

A

W

0

±

3

3

3

Absolute Maximum Ratings

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.10 MAX.

L

0.45 REF.

A1

0

0.10

L1

0.60 REF.

A2

0.70

1.00

0°

10°

c

0.12 REF.

b

0.30

0.50

D

2.70

3.10

e

0.95 REF.

E

2.60

3.00

e1

1.90 REF.

E1

1.40

1.80

RoHS Compliant Product