Dated : 14/08/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 8550 (2A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into two groups C and
D according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
25
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
2
A
Base Current
-IB
100
mA
Power Dissipation
Ptot
1
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 5 mA
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 1.5 A
8550C
8550D
hFE
hFE
hFE
hFE
45
120
160
40
-
-
-
-
-
200
300
-
-
-
-
-
Collector Base Cutoff Current
at -VCB = 35 V
-ICBO
-
-
100
nA
Emitter Base Cutoff Current
at -VEB = 6 V
-IEBO
-
-
100
nA
Collector Base Breakdown Voltage
at -IC = 100 µA
-V(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 2 mA
-V(BR)CEO
25
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
-V(BR)EBO
6
-
-
V
Collector Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
-VBE(sat)
-
-
1.2
V
Base Emitter On Voltage
at -IC = 10 mA, -VCE = 1 V
-VBE(on)
-
-
1
V
Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA
fT
120
-
-
MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
COB
-
15
-
pF
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
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