Dated : 03/02/2009
SEMTECH ELECTRONICS LTD.
(
Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BAV99
HIGH-SPEED DOUBLE DIODE
fast switching in thick and thin-film circuits diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current (Double Diode Loaded)
IF
125
mA
Continuous Forward Current (Single Diode Loaded)
IF
215
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non-repetitive Peak Forward Current Tj = 25 OC at t = 1 µs
at t = 1 ms
at t = 1 s
IFSM
4.5
1
0.5
A
Power Dissipation
Ptot
250
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
0.715
0.855
1
1.25
V
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, Tj = 150 OC
at VR = 75 V, Tj = 150 OC
IR
30
1
30
50
nA
µA
µA
µA
Diode Capacitance
at f = 1 MHz
Cd
1.5
pF
Reverse Recovery Time
at IF = IR = 10 mA, IR = 1 mA, RL = 100 Ω
trr
4
ns
Forward Recovery Voltage
at IF = 10 mA, tr = 20 ns
Vfr
1.75
V
Thermal Resistance from Junction to ambient
1)
Rthja
500
K/W
1) Device mounted on an FR4 printed-circuit board.
3
1
2
Marking Code: A7
SOT-23 Plastic Package
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