Dated : 27/12/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
BC307
BC308
Unit
Collector Base Voltage
-VCBO
50
30
V
Collector Emitter Voltage
-VCEO
45
25
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
100
mA
Total Power Dissipation
Ptot
500
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group
A
B
C
hFE
hFE
hFE
120
180
380
220
460
800
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
at -VCB = 30 V
BC307
BC308
-ICBO
-
-
15
15
nA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
BC307
BC308
-V(BR)CEO
45
25
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
-V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
at -IC = 100 mA, -IB = 5 mA
-VCE(sat)
-
-
0.3
0.6
V
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
-VBE(on)
0.55
0.7
V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
fT
100
-
MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Ccb
-
6
pF
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
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