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EMP312 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EMP312 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 2 page ![]() EMP312 UPDATED 04/04/2008 21.0 – 24.0 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised April 2008 Dimension: 2140um X 2650um Thickness: 75um ± 13um FEATURES • 21.0 – 24.0 GHz Operating Frequency Range • 28.5dBm Output Power at 1dB Compression • 13.0 dB Typical Small Signal Gain • -40dBc OIMD3 @Each Tone Pout 18.5dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=760mA) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 21.0 24.0 GHz P1dB Output Power at 1dB Gain Compression 27.0 28.5 dBm Gss Small Signal Gain 10.0 13.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 18.5dBm -40 -37 dBc Input RL Input Return Loss -15 -10 dB Output RL Output Return Loss -15 -10 dB Idss Saturate Drain Current V DS =3V, VGS =0V 858 1072 1288 mA VDD Power Supply Voltage 7 8 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 8 oC/W Tb Operating Base Plate Temperature -35 +85 ºC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION 1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8 V VGS Gate to Source Voltage -4 V IDD Drain Current Idss IGSF Forward Gate Current 15mA PIN Input Power @ 3dB compression TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT Total Power Dissipation 12.6W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature |
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