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2N3055 Datasheet(PDF) 2 Page - Motorola, Inc |
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2N3055 Datasheet(HTML) 2 Page - Motorola, Inc |
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2 / 4 page ![]() 2N3055 MJ2955 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 — Vdc Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, RBE = 100 Ohms) VCER(sus) 70 — Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO — 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX — — 1.0 5.0 mAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 5.0 mAdc *ON CHARACTERISTICS (1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE 20 5.0 70 — — Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) — 1.1 3.0 Vdc Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) — 1.5 Vdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Nonrepetitive) Is/b 2.87 — Adc DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 — MHz *Small–Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120 — *Small–Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe 10 — kHz * Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. 20 6 Figure 2. Active Region Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 6 4 2 1 0.6 0.4 0.2 10 20 40 60 2N3055, MJ2955 dc 500 µs 1 ms 250 µs 50 µs BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 2 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. |
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