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2N3055 Datasheet(PDF) 2 Page - Motorola, Inc

Part # 2N3055
Description  15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
PDF  4 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

2N3055 Datasheet(HTML) 2 Page - Motorola, Inc

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2N3055 MJ2955
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
60
—
Vdc
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, RBE = 100 Ohms)
VCER(sus)
70
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
—
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
—
1.0
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
*ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
70
—
—
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
—
1.1
3.0
Vdc
Base–Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.5
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
Is/b
2.87
—
Adc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
—
MHz
*Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
15
120
—
*Small–Signal Current Gain Cutoff Frequency
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
fhfe
10
—
kHz
* Indicates Within JEDEC Registration. (2N3055)
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
20
6
Figure 2. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
2N3055, MJ2955
dc
500
µs
1 ms
250
µs
50
µs
BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature according to Figure 1.



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