TLC1078, TLC1078Y, TLC1079, TLC1079Y

LinCMOS

™ µPOWER PRECISION

OPERATIONAL AMPLIFIERS

SLOS179 – FEBRUARY 1997

2

POST OFFICE BOX 655303

description (continued)

The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up

to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling

these devices as exposure to ESD may result in degradation of the device parametric performance. The

TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large

100 mA.

The C-suffix devices are characterized for operation from 0

°C to 70°C. The I-suffix devices are characterized

for operation from – 40

°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of – 55

°C to 125°C. The wide range of packaging options includes small-outline and

chip-carrier versions for high-density system applications.

AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

SMALL OUTLINE†

CHIP CARRIER

CERAMIC DIP

CERAMIC DIP

PLASTIC DIP

PLASTIC DIP

FORM‡

(Y)

(D)

(FK)

(J)

(JG)

(N)

(P)

(Y)

0

°C to 70°C

TLC1078CD

TLC1079CD

—

—

—

TLC1079CN

TLC1078CP

TLC1078Y

TLC1079Y

–40

°C to 85°C

TLC1078ID

TLC1079ID

—

—

—

TLC1079IN

TLC1078IP

—

–55

°C to 125°C

TLC1078MD

TLC1079MD

TLC1078MFK

TLC1079MFK

TLC1079MJ

TLC1078MJG

TLC1079MN

TLC1078MP

—

† The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC1078CDR).

‡ Chip forms are tested 25

°C only.

symbol (each amplifier)

OUT

IN –

IN +