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PCS2I2310ANZ Datasheet(PDF) 4 Page - PulseCore Semiconductor |
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PCS2I2310ANZ Datasheet(HTML) 4 Page - PulseCore Semiconductor |
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4 / 12 page ![]() September 2006 PCS2I2310ANZ rev 0.5 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs 4 of 12 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Operating Conditions Parameter Description Min Max Unit VDD Supply Voltage 3.135 3.465 V TA Operating Temperature (Ambient Temperature) 0 70 °C CL Load Capacitance 20 30 pF CIN Input Capacitance 7 pF tPU Power-up time for all VDD's to reach minimum specified voltage (power ramps must be monotonic) 0.05 50 ms Electrical Characteristics Parameter Description Test Conditions Min Typ Max Unit VIL Input LOW Voltage Except serial interface pins 0.8 V VILIIC Input LOW Voltage For serial interface pins only 0.7 V VIH Input HIGH Voltage 2.0 V VOL Output LOW Voltage 1 IOL= 25 mA 0.4 V VOH Output HIGH Voltage 1 IOH = –36 mA 2.4 V ICC Quiescent Supply Current VDD= 3.465V, Vi = VDD or GND IO =0 50 100 µA IOZ High Impedance Output Current VDD= 3.465V, Vi = VDD or GND ±10 µA IOFF OffState Current (for SCL ,SDATA) VDD= 0V, Vi = 0V or 5.5V 50 µA ∆ICC Change in Supply Current VDD= 3.135V to 3.465V One Input at VDD-0.6, All other Inputs at VDD or GND 500 µA Ii Input Leakage VDD= 3.465V or GND (Applicable to all Input Pins) -5 +5 µA IDD Supply Current 1 Unloaded outputs, 133MHz 266 mA IDD Supply Current 1 Loaded outputs, 30pF, 133MHz 360 mA IDD Supply Current 1 Unloaded outputs, 100MHz 200 mA IDD Supply Current 1 Loaded outputs, 30pF,100MHz 290 mA IDD Supply Current 1 Unloaded outputs, 66.67MHz 150 mA IDD Supply Current 1 Loaded outputs, 30pF ,66.67MHz 185 mA IDDS Supply Current BUF_IN=VDD or VSS, all other inputs at VDD 500 µA Note: 1. Parameter is guaranteed by design and characterization. Not 100% tested in production. Symbol Parameter Rating Unit VDD Supply Voltage to Ground Potential -0.5V to +7.0 V VIN DC Input Voltage (Except BUF_IN) -0.5V to VDD + 0.5 V VINB DC Input Voltage (BUF_IN) -0.5V to +7.0 V TSTG Storage Temperature -65°C to +150 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2000 V |
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