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PCS2I2310ANZ Datasheet(PDF) 4 Page - PulseCore Semiconductor

Part # PCS2I2310ANZ
Description  3.3V SDRAM Buffer for Mobile PCS with 4 SO-DIMMsQ
PDF  12 Pages
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Manufacturer  PULSECORE [PulseCore Semiconductor]
Direct Link  http://www.onsemi.com/
Logo PULSECORE - PulseCore Semiconductor

PCS2I2310ANZ Datasheet(HTML) 4 Page - PulseCore Semiconductor

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September 2006
PCS2I2310ANZ
rev 0.5
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs
4 of 12
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Operating Conditions
Parameter
Description
Min
Max
Unit
VDD
Supply Voltage
3.135
3.465
V
TA
Operating Temperature (Ambient Temperature)
0
70
°C
CL
Load Capacitance
20
30
pF
CIN
Input Capacitance
7
pF
tPU
Power-up time for all VDD's to reach minimum specified voltage
(power ramps must be monotonic)
0.05
50
ms
Electrical Characteristics
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VIL
Input LOW Voltage
Except serial interface pins
0.8
V
VILIIC
Input LOW Voltage
For serial interface pins only
0.7
V
VIH
Input HIGH Voltage
2.0
V
VOL
Output LOW Voltage
1
IOL= 25 mA
0.4
V
VOH
Output HIGH Voltage
1
IOH = –36 mA
2.4
V
ICC
Quiescent Supply
Current
VDD= 3.465V, Vi = VDD or GND
IO =0
50
100
µA
IOZ
High Impedance
Output Current
VDD= 3.465V, Vi = VDD or GND
±10
µA
IOFF
OffState Current
(for SCL ,SDATA)
VDD= 0V, Vi = 0V or 5.5V
50
µA
∆ICC
Change in Supply
Current
VDD= 3.135V to 3.465V
One Input at VDD-0.6, All other Inputs
at VDD or GND
500
µA
Ii
Input Leakage
VDD= 3.465V or GND
(Applicable to all Input Pins)
-5
+5
µA
IDD
Supply Current
1
Unloaded outputs, 133MHz
266
mA
IDD
Supply Current
1
Loaded outputs, 30pF, 133MHz
360
mA
IDD
Supply Current
1
Unloaded outputs, 100MHz
200
mA
IDD
Supply Current
1
Loaded outputs, 30pF,100MHz
290
mA
IDD
Supply Current
1
Unloaded outputs, 66.67MHz
150
mA
IDD
Supply Current
1
Loaded outputs, 30pF ,66.67MHz
185
mA
IDDS
Supply Current
BUF_IN=VDD or VSS,
all other inputs at VDD
500
µA
Note: 1. Parameter is guaranteed by design and characterization. Not 100% tested in production.
Symbol
Parameter
Rating
Unit
VDD
Supply Voltage to Ground Potential
-0.5V to +7.0
V
VIN
DC Input Voltage (Except BUF_IN)
-0.5V to VDD + 0.5
V
VINB
DC Input Voltage (BUF_IN)
-0.5V to +7.0
V
TSTG
Storage Temperature
-65°C to +150
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage
(As per JEDEC STD22- A114-B)
2000
V



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