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2N6849 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N6849 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 1 (072018) Page 1 of 2 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS -100 Vdc Gate – Source Voltage VGS ± 20 Vdc Continuous Drain Current TC = +25°C ID1 -6.5 Adc Continuous Drain Current TC = +100°C ID2 -4.1 Adc Max. Power Dissipation Ptl 25 (1) W Drain to Source On State Resistance Rds(on) 0.3 (2) Ω Operating & Storage Temperature Top, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = -10Vdc, ID = -4.1A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc V(BR)DSS -100 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 -5.0 -4.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C IDSS1 IDSS2 -25 -0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = -10V, ID = -4.1A pulsed VGS = -10V, ID = -6.5A pulsed Tj = -125°C VGS = -10V, ID = -4.1A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.3 0.32 0.54 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed VSD -4.3 Vdc TO-205AF (formerly TO-39) |
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