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APT22F100J Datasheet(PDF) 4 Page - Microsemi Corporation |
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APT22F100J Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 4 page ![]() 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. SOT-227 (ISOTOP®) Package Outline 1ms 100ms Rds(on) DC line 100µs I DM 10ms 13µs T J = 125°C T C = 75°C Scaling for Different Case & Junction Temperatures: I D = I D(T C = 25 °C)*(TJ - TC)/125 100µs I DM 100ms 10ms 13µs Rds(on) DC line T J = 150°C T C = 25°C 1ms 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t 2 t2 t1 Note: t1 = Pulse Duration V DS , DRAIN-TO-SOURCE VOLTAGE (V) V DS , DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 1 10 100 1000 1 10 100 1000 0.25 0.20 0.15 0.10 0.05 0 200 100 10 1 0.1 200 100 10 1 0.1 APT22F100J |
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