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APTGF50TL60T3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGF50TL60T3G
Description  Three level inverter NPT IGBT Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50TL60T3G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGF50TL60T3G
www.microsemi.com
1- 8
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
65
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
VCES = 600V
IC = 50A @ Tc = 80°C
Application
•
Solar converter
•
Uninterruptible Power Supplies
Features
•
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
•
Kelvin emitter for easy drive
•
Very low stray inductance
•
High level of integration
•
Internal thermistor for temperature monitoring
Benefits
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive TC of VCEsat
•
Low profile
•
RoHS Compliant
Three level inverter
NPT IGBT Power Module


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