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BD157 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD157 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD157 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 B 250 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 275 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA B 1.0 V ICBO Collector Cutoff Current VCB= 275V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 50m A; VCE= 10V 30 240 isc Website:www.iscsemi.cn www.iscsemi.cn |
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