AUSTIN SEMICONDUCTOR, INC.

FLASH

FLASH

FLASH

FLASH

FLASH

AS8FLC2M32

AS8FLC2M32B

Rev. 1.2 5/09

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

3

Austin Semiconductor, Inc.

A system reset would then also reset the FLASH device,

enabling the system microprocessor to read the boot-up

firmware from the FLASH memory array. The device offers two

power-saving features. When addresses have been stable for

a specified amount of time, the device enters the AUTOMATIC

SLEEP MODE. The system can also place the device into the

STANDBY mode. Power consumption is greatly reduced in

both these modes.

Device Bus Operations

This section describes the use of the command register for

setting and controlling the bus operations. The command

register itself does not occupy any addressable memory

locations. The register is composed of a series of latches that

store the commands, addresses and data information needed

to execute the indicated command. The contents of the register

serve as the input to the internal state machine. The state

machine output dictates the function of the device. Table 1

lists the device bus operations, the inputs and control/stimulus

levels they require, and the resulting output. The following

subsections describe each of these operations in further detail.

Requirements for Reading Array Data

To read array data from the outputs, the system must drive the

CSx\ and OE\ pins to VIL. Chip Select CSx\ is the power and

chip select control of the byte or bytes targeted by the system

(user). Output Enable [OE\] is the output control and gates

array data to the output pins. Write (byte) Enables [WEx\]

should remain at VIH levels.

The internal state machine is set for reading array data upon

device power-up, or after a HARDWARE RESET. This ensures

that no spurious alteration of the memory content occurs during

Table 1

the power transition. No command is necessary in this mode

to obtain array data. Standard microprocessor read cycles

that

assert valid data on the device address inputs produce valid

data on the data outputs. The device remains enabled for read

access until the command register contents are altered.

See READING ARRAY DATA for more information. Refer to

AC Read Operations table data for timing specifications

relevant to this operational mode.

Writing Commands/Command Sequences

To WRITE a command or command sequence, the system must

drive CSx\, WEx\ to VIL and OE\ to VIH.

An ERASE command operation can erase one sector, multiple

sectors, or the entire array. Table 2 indicates the address space

contained within each sector within the array. A sector address

consists of the address bits required to uniquely select a sector.

The “Command Definitions” section has details on erasure of

a single, multiple sectors, the entire array or suspending/

resuming the erase operation.

After the system writes the autoselect command sequence,

the device enters the autoselect mode. The system can then

read autoselect codes from the internal register (which is

separate from the memory array) on each of the Data input/

output bits within each byte of the MCM FLASH array.

Standard read cycle timings apply in this mode. Refer to the

Autoselect Mode and Autoselect Command Sequence sections

for more information.

ICC2 in the DC Characteristics table represents that active

current specification for the WRITE mode. The AC

Characteristics section contains timing specifications for Write

Operations.

RESET\

CS1\

CS2\

CS3\

CS4\

WE1\ WE2\ WE3\ WE4\ OE\

OPERATION

ADDRESSES

DATA BUS (DQ0-DQX)

L

HHH

D0-D7 Out

HL

H

H

D8-D15 Out

HH

L

H

D16-D31 Out

HHH

L

D24-D31 Out

LLLL

D0-D31 Out

L

HHH

L

H

H

H

D0-D7 In

H

L

H

H

H

L

H

H

D8-D15 In

H

H

L

H

H

H

L

H

D16-D31 In

H

H

H

L

H

H

H

L

D24-D31 In

LLLL

LLLL

D0-D31 In

VCC +/- 0.3V

VCC +/- 0.3V

VCC +/- 0.3V

VCC +/- 0.3V

VCC +/- 0.3V

XXXX

X

Standby

X

X

LLLL

HHHH

H

Output Diable

X

L

XXXX

XXXX

X

Reset

X

VID

LLLL

LLLL

H

Sector Protect

SECTOR ADDRESS

A7=L, A2=H, A1=L

VID

LLLL

LLLL

H

Sector Unprotect

SECTOR ADDRESS

A7=L, A2=H, A1=L

VID

XXXX

XXXX

X

Temporary Sector Unprotect

Legend

Notes

H

WRITE

A0-Ax In

H

H

L

READ

A0-Ax In

H

HHH