FDMS7656AS datasheet(2/8 Pages) FAIRCHILD

2 / 8 page

FDMS7656AS Rev.C

www.fairchildsemi.com

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 1 mA, VGS = 0 V

∆BV

DSS

∆T

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, referenced to 25 °C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

500

µA

IGSS

Gate to Source Leakage Current, Forward

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 1 mA

1.2

1.6

3.0

∆V

GS(th)

∆T

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 10 mA, referenced to 25 °C

-5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 30 A

1.3

1.8

Ω

VGS = 7 V, ID = 27 A

1.5

1.9

VGS = 4.5 V, ID = 25 A

1.6

2.0

VGS = 10 V, ID = 30 A, TJ = 125 °C

1.8

2.5

gFS

Forward Transconductance

VDS = 5 V, ID = 30 A

161

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

6545

8705

Coss

Output Capacitance

2465

3280

Crss

Reverse Transfer Capacitance

210

315

Gate Resistance

0.5

1.1

Ω

td(on)

Turn-On Delay Time

VDD = 15 V, ID = 30 A,

VGS = 10 V, RGEN = 6 Ω

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

713

Total Gate Charge

VGS = 0 V to 10 V

VDD = 15 V,

ID = 30 A

133

Total Gate Charge

VGS = 0 V to 4.5 V

Qgs

Gate to Source Charge

18.2

Qgd

Gate to Drain “Miller” Charge

9.1

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2 A

(Note 2)

0.37

0.7

VGS = 0 V, IS = 30 A

(Note 2)

0.74

1.2

trr

Reverse Recovery Time

IF = 30 A, di/dt = 300 A/µs

Qrr

Reverse Recovery Charge

136

Notes:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

µs, Duty cycle < 2.0%.

3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

a. 50 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

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