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MASWSS0006SMB Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASWSS0006SMB Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 3 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Rev. V4 MASWSS0006 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Low Voltage Operation: 2.5 V • Excellent Harmonics: <-67 dBc at +34 dBm & 1.0 GHz • Low Insertion Loss: 0.40 dB at 1.0 GHz • High Isolation: 20 dB at 2.0 GHz • SOT-26 Package • 0.5 micron GaAs PHEMT Process Description M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SOT-26 package. The MASWSS0006 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are re- quired. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3.0 GHz requiring high power at low control voltage. The MASWSS0006 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliabil- ity. Ordering Information 1 Part Number Package MASWSS0006 Bulk Packaging MASWSS0006TR 1000 piece reel MASWSS0006TR-3000 3000 piece reel MASWSS0006SMB Sample Test Board 1. Reference Application Note M513 for reel size information. Pin No. Pin Name Description 1 RF1 RF Port 1 2 GND RF Ground 3 RF2 RF Port 2 4 V2 Control 2 5 RFC RF Common Port 6 V1 Control 1 Pin Configuration Functional Schematic PIN 1 39 pF 39 pF 39 pF RFC V1 PIN 6 RF1 GND V2 RF2 100pF 100pF 100pF Parameter Absolute Maximum Input Power (0.5 - 3.0 GHz, 2.5 V Control) +38 dBm Voltage ±8.5 volts Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings 2,3 V1 V2 ANT– RF1 ANT - RF2 1 0 On Off 0 1 Off On Truth Table 4,5 4. Differential voltage, V (state 1) - V (State 0), must be +2.5 V minimum. 5. 0 = -5 V to 2.5 V, 1 = -2.5 V to +5 V. 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. |
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