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MB85R2002 Datasheet(PDF) 7 Page - fujitsu semiconductor |
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MB85R2002 Datasheet(HTML) 7 Page - fujitsu semiconductor |
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7 / 12 page ![]() MB85R2002 DS05-13108-4E 7 (2) Write Operation (within recommended operating conditions) 3. Pin Capacitance Parameter Symbol Value Unit Min Max Write Cycle Time tWC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns LB, UB Active Time tBP 120 ⎯ ns Pre-Charge Time tPC 20 ⎯ ns Address Setup Time tAS 5 ⎯ ns Address Hold Time tAH 50 ⎯ ns LB, UB Setup Time tBS 5 ⎯ ns Write Pulse Width tWP 120 ⎯ ns Data Setup Time tDS 0 ⎯ ns Data Hold Time tDH 50 ⎯ ns Write Setup Time tWS 5 ⎯ ns Parameter Symbol Condition Value Unit Min Typ Max Input Capacitance CIN VIN = VOUT = GND f = 1 MHz, TA = +25 oC ⎯⎯ 10 pF Output Capacitance COUT ⎯⎯ 10 pF |
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