MCP98242-BESLASHST datasheet(3/52 Pages) MICROCHIP

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DS21996C-page 3

MCP98242

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VDD.................................................................................. 6.0V

Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V

Pin A0 ................................................... GND – 0.3V to 12.5V

Storage temperature .....................................-65°C to +150°C

Ambient temp. with power applied ................-40°C to +125°C

Junction Temperature (TJ) .......................................... +150°C

ESD protection on all pins (HBM:MM) ................. (4 kV:300V)

Latch-Up Current at each pin (+25°C) ..................... ±200 mA

†Notice: Stresses above those listed under “Maximum

ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 3.0V to 3.6V, GND = Ground, SDA/SCL pulled-up to

VDD, and TA = -20°C to +125°C.

Parameters

Sym

Min

Typ

Max

Unit

Conditions

Power Supply

Operating Voltage

VDD

3.0

—

3.6

Operating Current

Temperature Sensor

IDD

—

200

500

µA

EEPROM Inactive

EEPROM write

IDD

—

1100 2000

µA

Sensor in Shutdown Mode (for tWC)

EEPROM read

IDD

—

100

500

µA

Sensor in Shutdown Mode

Shutdown Current

ISHDN

—

µA

EEPROM Inactive,

Sensor in Shutdown Mode

Power On Reset (POR)

Threshold

VPOR

—

2.3

—

Temperature Sensor (VDD falling)

VPOR

—

1.6

—

EEPROM (VDD falling) (see Section5.4)

Power Supply Rejection,

TA = +25°C

Δ°C/ΔVDD

—±0.4

—

°C/V

VDD = 3.0V to 3.6V

Δ°C/ΔVDD

—±0.15

—

°C

VDD = 3.3V+150 mVPP AC (0 to 1 MHz)

Temperature Sensor Accuracy

+75°C < TA ≤ +95°C

TACY

-1.0

±0.5

+1.0

°C

+40°C < TA ≤ +125°C

TACY

-2.0

±1

+2.0

°C

-20°C < TA ≤ +125°C

TACY

-3.0

±2

+3.0

°C

TA = -40°C

TACY

—-2

—

°C

Conversion Time

0.25°C/bit

tCONV

—

125

15 s/sec (typical) (See Section5.2.3.3)

Event Output (Open-drain)

High-level Current (leakage)

IOH

——

µA

VOH = VDD

Low-level Voltage

VOL

——

0.4

IOL= 3 mA

EEPROM

Write Cycle (byte/page)

tWC

—3

—

Endurance TA = +25°C

—

cycles VDD = 5V, Note 1

Write Protect High Voltage

VHI_WP

—

Applied at A0 pin, Note 1

Thermal Response

DFN

tRES

—

0.7

—

Time to 63% (89°C)

25°C (Air) to 125°C (oil bath)

TSSOP

tRES

—1.4

—

Note 1: Characterized but not production tested.

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