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RE46C141 Datasheet(PDF) 1 Page - Microchip Technology |
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RE46C141 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 12 page ![]() R&E International A Subsidiary of Microchip Technology Inc. RE46C141 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification © 2009 Microchip Technology Inc. DS22177A-page 1 General Description The RE46C141 is low power CMOS photoelectric type smoke detector IC. With minimal external components this circuit will provide all the required features for a photoelectric type smoke detector. The design incorporates a gain selectable photo amplifier for use with an infrared emitter/detector pair. An internal oscillator strobes power to the smoke detection circuitry for 100us every 8.1 seconds to keep standby current to a minimum. If smoke is sensed the detection rate is increased to verify an alarm condition. A high gain mode is available for push button chamber testing. A check for a low battery condition and chamber integrity is performed every 32 seconds when in standby. The temporal horn pattern supports the NFPA 72 emergency evacuation signal. An interconnect pin allows multiple detectors to be connected such that when one units alarms, all units will sound. Utilizing low power CMOS technology the RE46C141 was designed for use in smoke detectors that comply with Underwriters Laboratory Specification UL217 and UL268. Features • Internal Power On Reset • Low Quiescent Current Consumption • Available in 16L PDIP or 16L N SOIC • ESD Protection on all Pins • Interconnect up to 40 Detectors • Temporal Horn Pattern • Low Battery and Chamber Test • Compatible with Motorola MC145012 • Available in Standard Packaging or RoHS Compliant Pb Free Packaging. Pin Configuration 16 1 TEST C1 2 LBSET C2 15 VSS DETECT 3 14 STROBE 4 ROSC 13 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltage VDD 12.5 V Input Voltage Range Except FEED, IO Vin -.3 to Vdd +.3 V FEED Input Voltage Range Vinfd -10 to +22 V IO Input Voltage Range Vio1 -.3 to 17 V Input Current except FEED Iin 10 mA Operating Temperature TA -25 to 75 °C Storage Temperature TSTG -55 to 125 °C Maximum Junction Temperature TJ 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and operation at these conditions for extended periods may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when handling this product. Damage can occur when exposed to extremely high static electrical charge. COSC 5 12 VDD IRED IO HORNB LE 6 D 11 7 FEED 10 HORNS 8 9 |
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