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TPC6503 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPC6503 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  TPC6503 2006-02-16 1 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Collector current Pulse ICP 2.5 A Base current IB 150 mA DC 0.8 Collector power dissipation t = 10 s PC (Note) 1.6 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.15 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.5 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 0.5 A, IB = 10 mA ⎯ ⎯ 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.5 A, IB = 10 mA ⎯ ⎯ 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 18 ⎯ pF Rise time tr ⎯ 43 ⎯ Storage time tstg ⎯ 295 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ∼− 12 V, RL = 24 Ω IB1 = −IB2 = 17 mA ⎯ 45 ⎯ ns Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 0.01 g (typ.) |
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