TPC6901A

2009-07-06

1

TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type

TPC6901A

High-Speed Switching Applications

MOS Gate Drive Applications

• NPN and PNP transistors are mounted on a compact and slim package.

• High DC current gain

• Low collector-emitter saturation voltage

• High-speed switching

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

100

−50

V

Collector-emitter voltage

80

−50

V

Collector-emitter voltage

50

−50

V

Emitter-base voltage

7

−7

V

DC (Note 1)

1.0

−0.7

A

Collector current

Pulse (Note 1)

5.0

−5.0

A

Base current

0.1

−0.1

A

Collector power

dissipation (t=10 s)

Single-device

operation

(Note 2)

500

mW

Single-device

operation

(Note 2)

400

Collector power

dissipation (DC)

Single-device value

at dual operation

(Note 2)

330

mW

Thermal resistance,

junction to ambient

(t=10 s)

Single-device

operation

(Note 2)

250

°C/W

Single-device

operation

(Note 2)

312

Thermal resistance,

junction to ambient

(DC)

Single-device value

at dual operation

(Note 2)

378

°C/W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the junction temperature is below 150℃.

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)