TPC8405 datasheet(3/11 Pages) TOSHIBA

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TPC8405

2009-09-29

P-ch

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut-OFF current

IDSS

VDS = −30 V, VGS = 0 V

—

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

—

Drain-source breakdown

voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

—

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

—

−2.0

RDS (ON)

VGS = −4.5 V, ID = −2.2 A

—

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −2.2 A

—

mΩ

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −2.2 A

—

Input capacitance

Ciss

—

1540

—

Reverse transfer capacitance

Crss

—

220

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

250

—

Rise time

—

5.0

—

Turn-ON time

ton

—

Fall time

—

Switching time

Turn-OFF time

toff

—

125

—

Total gate charge (Gate-source

plus gate-drain)

—

Gate-source charge 1

Qgs1

—

4.4

—

Gate-drain (“miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A

—

8.2

—

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

−18

Forward voltage (diode)

VDSF

IDR = −4.5 A, VGS = 0 V

—

1.2

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