TPCC8102 datasheet(3/7 Pages) TOSHIBA

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TPCC8102

2009-08-06

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

Drain cutoff current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = −20 V

−13

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1.0 mA

−0.8

⎯

−2.0

VGS = −4 V, ID = −7.5 A

⎯

25.5

33.2

Drain-source ON-resistance

RDS (ON)

VGS = −10 V, ID = −7.5 A

⎯

14.5

18.9

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −7.5 A

⎯

Input capacitance

Ciss

⎯

1200

⎯

Reverse transfer capacitance

Crss

⎯

250

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

370

⎯

Rise time

⎯

9.1

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

109

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

3.4

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −15 A

⎯

8.0

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

−45

Forward voltage (diode)

VDSF

IDR = −15 A, VGS = 0 V

⎯

1.2

VDD ≈ −15 V

-10

VGS

0 V

ID = −7.5 A

VOUT

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