2SD965 datasheet(1/2 Pages) WEITRON

Part #	2SD965

Description	NPN Transistor

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Manufacturer	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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WEITRON

hpp://www.weitron.com.tw

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01-Sep-09

NPN Transistor

TO-92

2SD965

WEITRON

Lead(Pb)-Free

P b

1. EMITTER

2. COLLECTOR

3. BASE

3.

BASE

1.

EMITTER

COLLECTOR

2.

FEATURES :

* Flash unit of camera

* Switching circuit

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

42

V

VCEO

Collector-Emitter Voltage

22

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

5

A

PC

Collector Power Dissipation

750

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA, IE=0

42

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

22

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V, IC=0

0.1

μA

hFE(1)

VCE=2V, IC= 0.15 mA

150

hFE(2)

VCE= 2V,IC = 500 mA

340

2000

DC current gain

hFE(3)

VCE=2V, IC = 2A

150

Collector-emitter saturation voltage

VCE(sat)

IC=3000mA,IB=100 mA

0.35

V

Transition frequency

fT

VCE=6V,

IC=50mA,f=30MHz

150

MHz

CLASSIFICATION OF hFE(2)

V

T

R

k

n

a

R

Range

340-600

560-950

900-2000

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