SSF2302

V =2.5V, I

GS

70

115

mΩ

Drain-Source On-State Resistance

V =4.5V, I

GS

45

60

mΩ

Forward Transconductance

g

V =5V,I

FS

DS

8

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

300

PF

lss

Output Capacitance

120

PF

V =10V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

80

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

7

15

nS

d(on)

Turn-on Rise Time

55

80

nS

V =10V, R = 2.8 Ω

DD

L

Turn-Off Delay Time

16

60

nS

V =4.5V,R

Turn-Off Fall Time

GS

10

25

nS

Total Gate Charge

Q

4.0

10

nC

g

Gate-Source Charge

0.65

nC

V =10V,I

Gate-Drain Charge

DS

=4.5V

GS

1.5

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =0.94A

0.76

1.2

V

SD

GS

S

Diode Forward Current (Note 2)

I

0.94

A

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

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