MMBT5401 datasheet(1/2 Pages) DAYA

Part #	MMBT5401

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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SOT-23 Plastic-Encapsulate Transistors

MMBT5401 TRANSISTOR (PNP)

FEATURES

Complementary to MMBT5551

Ideal for medium power amplification and switching

MARKING: 2L

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.6

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-160

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-150

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120 V , IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V ,

IC=0

-0.1

μA

hFE1

VCE= -5V, IC= -1mA

80

hFE2

VCE= -5V, IC=-10mA

100

300

DC current gain

hFE3

VCE= -5V, IC=-50mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-50 mA, IB= -5mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= -50 mA, IB= -5mA

-1

V

Transition frequency

fT

VCE= -5V, IC= -10mA

f=30MHz

100

MHz

-

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

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MMBT5401 Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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