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UT3P01Z Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT3P01Z Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-341..A P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS (ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8Ω @VGS = -4 V * Ultra low gate charge ( typical 1.43 nC ) * Low reverse transfer capacitance ( CRSS = typical 1.8 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness * Halogen Free SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT3P01ZG-AL3-R SOT-323 S G D Tape Reel UT3P01ZG-AN3-R SOT-523 S G D Tape Reel MARKING |
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