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IKCS08F60F2C Datasheet(PDF) 13 Page - Infineon Technologies AG |
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IKCS08F60F2C Datasheet(HTML) 13 Page - Infineon Technologies AG |
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13 / 18 page ![]() CIPOS™ IKCS08F60F2A IKCS08F60F2C Data Sheet 13/18 Rev. 2, March 2009 Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) 0V 1V 2V 3V 0A 3A 6A 9A 125°C 150°C V GE=25°C 0V 1V 2V 0A 3A 6A 9A 125°C 150°C V GE=25°C VCE, COLLECTOR EMITTER VOLTAGE VF FORWARD VOLTAGE Figure 5. Typical IGBT output characteristic Figure 6. Typical diode forward current as a function of forward voltage 0A 2A 4A 6A 8A 10A 10ns 100ns 1000ns t f t d(on) t r t d(off) 25°C 50°C 75°C 100°C 125°C 10ns 100ns 1000ns t f t d(on) t r t d(off) IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE = 300V Dynamic test circuit in Figure A) Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, IC = 4A Dynamic test circuit in Figure A) |
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