ATmega162 datasheet(239/324 Pages) ATMEL

239 / 324 page

239

2513K–AVR–07/09

ATmega162/V

Figure 98. Programming the Flash Waveforms

Note:

“XX” is don’t care. The letters refer to the programming description above.

Programming the

EEPROM

The EEPROM is organized in pages, see Table 106 on page 236. When programming the

EEPROM, the program data is latched into a page buffer. This allows one page of data to be

programmed simultaneously. The programming algorithm for the EEPROM data memory is as

follows (refer to “Programming the Flash” on page 237 for details on Command, Address and

Data loading):

A: Load Command “0001 0001”.

G: Load Address High Byte (0x00 - 0xFF).

B: Load Address Low Byte (0x00 - 0xFF).

C: Load Data (0x00 - 0xFF).

E: Latch data (give PAGEL a positive pulse).

K: Repeat 3 through 5 until the entire buffer is filled.

L: Program EEPROM page

Set BS to “0”.

Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY

goes low.

Wait until to RDY/BSY goes high before programming the next page

(See Figure 99 for signal waveforms).

RDY/BSY

RESET +12V

PAGEL

BS2

0x10

ADDR. LOW

ADDR. HIGH

DATA

DATA LOW

DATA HIGH

ADDR. LOW

DATA LOW

DATA HIGH

XA1

XA0

BS1

XTAL1

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