HAT2058R datasheet(2/8 Pages) RENESAS

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HAT2058R

Preliminary

REJ03G1174-0300 Rev.3.00 Aug 25, 2009

Page 2 of 7

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

100

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG = ±100 μA, VDS = 0

Zero gate voltage drain current

IDSS

—

μA

VDS = 100 V, VGS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = ±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

1.0

—

2.5

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

—

ID = 2 A, VDS = 10 V

Note 5

RDS (on)

—

120

145

ID = 2 A, VGS = 10 V

Note 5

Static drain to source on state resistance

RDS (on)

—

150

180

ID = 2 A, VGS = 4 V

Note 5

Input capacitance

Ciss

—

420

—

Output capacitance

Coss

—

180

—

Reverse transfer capacitance

Crss

—

100

—

VDS = 10 V, VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

110

—

Fall time

—

VGS = 10 V, ID = 2 A,

VDD ≅ 30 V

Body-drain diode forward voltage

VDF

—

0.85

1.1

IF = 4 A, VGS = 0

Note 5

Body-drain diode reverse recovery time

trr

—

IF = 4 A, VGS = 0

diF/dt = 50 A/μs

Note: 5. Pulse test

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