IXFX55N50F datasheet(1/4 Pages) IXYS

Part #	IXFX55N50F

Description	HiPerRFTM Power MOSFETs

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C55

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

220

A

I

AR

T

C

= 25

°C55

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C

3.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

10

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

560

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-264

0.4/6 Nm/lb.in.

Weight

PLUS 247

6

g

TO-264

10

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5 V

I

GSS

V

GS

=

±20 V, V

DS = 0

±200 nA

I

DSS

V

DS = VDSS

T

J

= 25

°C

100

µA

V

GS = 0 V

T

J

= 125

°C3 mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

85 m

Ω

Note 1

98855-A (9/02)

PLUS 247TM (IXFX)

G

D

(TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

S

G

D

(TAB)

TO-264 AA (IXFK)

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low Intrinsic Rg

High dV/dt, Low t

rr

Features

●

RF capable Mosfets

● Ruggedpolysilicongatecellstructure

●

Double metal process for low gate

resistance

● Unclamped Inductive Switching (UIS)

rated

●

Low package inductance

- easy to drive and to protect

● Fast intrinsic rectifier

Applications

● DC-DC converters

● Switched-mode and resonant-mode

power supplies, >500kHz switching

● DC choppers

● Pulsegeneration

● Laser drivers

Advantages

● PLUS 247TM package for clip or spring

mounting

● Space savings

● High power density

IXFX 55N50F

V

DSS

= 500 V

IXFK 55N50F

I

D25

= 55 A

R

DS(on) =

85 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

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