MBRF10L60CT datasheet(2/7 Pages) ONSEMI

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MBR10L60CT, MBRF10L60CT

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MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

Average Rectified Forward Current

(Per Leg)

(Rated VR) TC = 140°C

(Per Device)

IF(AV)

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

200

Operating Junction Temperature (Note 1)

−55 to +150

°C

Storage Temperature

Tstg

−65 to +175

°C

ESD Ratings:

Machine Model = C

Human Body Model = 3B

> 400

> 8000

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Maximum Thermal Resistance

MBR10L60CT

Junction−to−Case

Junction−to−Ambient

MBRF10L60CT

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

RqJC

RqJA

2.8

5.7

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Rating

Symbol

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 5 A, TC = 25°C)

(IF = 5 A, TC = 125°C)

(IF = 10 A, TC = 25°C)

(IF = 10 A, TC = 125°C)

0.49

0.43

0.60

0.53

0.57

0.49

0.66

0.61

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 25°C)

(Rated DC Voltage, TC = 125°C)

220

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

DEVICE ORDERING INFORMATION

Device Order Number

Package Type

Shipping

MBR10L60CTG

TO−220AB

(Pb−Free)

50 Units / Rail

MBRF10L60CTG

TO−220FP

(Pb−Free)

50 Units / Rail

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