NTGD3147F datasheet(4/7 Pages) ONSEMI

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NTGD3147F

http://onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

VGS = −1.5 V

−1.8 V

−2.0 V

−2.2 V

−3.0 V

−2.4 V

−2.5 V

TJ = 25°C

−2.6 V

−2.8 V

1234

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TJ = 25°C

TJ = −55°C

TJ = 125°C

0.10

0.20

0.30

0.50

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = −2.2 A

0.05

0.10

0.15

0.20

0.30

VGS = −2.5 V

VGS = −3.0 V

VGS = −4.5 V

−ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = −2.0 V

0.6

0.8

1.2

1.4

1.6

−50

−25

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VGS = −4.5 V

ID = −2.2 A

200

400

600

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Capacitance Variation

CISS

COSS

CRSS

TJ = 25°C

VGS = 0 V

f = 1 MHz

VGS = −3.5 V to −4.5 V

VDS = −5 V

0.40

0.05

0.15

0.25

0.45

0.35

TJ = 25°C

2.5

3.5

4.5

1.5

TJ = 25°C

0.25

0.7

0.9

1.1

1.3

1.5

150

350

550

100

300

500

250

450

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