NTJS4160N datasheet(2/5 Pages) ONSEMI

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NTJS4160N

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction-to-Ambient – Steady State (Note 3)

RqJA

200

°C/W

Junction-to-Ambient - t

≤ 1 s (Note 3)

RqJA

132

Junction-to-Ambient – Steady State (Note 4)

RqJA

420

3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = 250 mA, ref to 25°C

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25°C

1.0

TJ = 125°C

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = +20 V

100

VDS = 0 V, VGS = -20 V

-200

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.8

2.4

Gate Threshold Temperature

Coefficient

VGS(TH)/TJ

-5.0

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V, ID = 2.6 A

VGS = 4.5 V, ID = 2.2 A

Forward Transconductance

gFS

VGS = 5.0 V, ID = 3.0 A

4.2

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

230

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V,

ID = 2.6 A

2.75

Threshold Gate Charge

QG(TH)

0.37

Gate-to-Source Charge

QGS

0.87

Gate-to-Drain Charge

QGD

1.1

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDD = 15 V,

ID = 1.0 A, RG = 6.0 W

8.7

Rise Time

7.2

Turn-Off Delay Time

td(OFF)

10.9

Fall Time

1.9

4.0

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 1.3 A

TJ = 25°C

0.79

1.2

TJ = 125°C

0.67

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.3 A

10.3

Charge Time

7.2

Discharge Time

3.1

Reverse Recovery Charge

QRR

4.0

5. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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