VRF190E

100V, 150W, 150MHz

FEATURES

• Enhanced Package for 30% higher P

D

• 150W with 22dB Typical Gain @ 30MHz, 100V

• 150W with 14dB Typical Gain @ 150MHz, 100V

• Excellent Stability & Low IMD

• RoHS Compliant

• 5:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• Drop in Replacement for SD3931-10 with Higher B

V

Symbol

Parameter

VRF190E

Unit

V

DSS

Drain-Source Voltage

270

V

I

D

Continuous Drain Current @ T

12

A

V

GS

Gate-Source Voltage

±40

V

P

D

Total Device dissipation @ T

390

W

T

STG

Storage Temperature Range

-65 to 200

°C

T

J

Operating Junction Temperature

200

RF POWER VERTICAL MOSFET

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

270

280

V

V

DS(ON)

On State Drain Voltage (I

3.5

5.0

I

DSS

Zero Gate Voltage Drain Current (V

1.0

mA

I

GSS

Gate-Source Leakage Current (V

1.0

μA

g

fs

Forward Transconductance (V

4.0

5

mhos

V

GS(TH)

Gate Threshold Voltage (V

2.9

3.6

4.4

V

Microsemi Website - http://www.microsemi.com

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

R

Junction to Case Thermal Resistance

0.45

°C/W

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

M174A

The VRF190E is a thermally-enhanced version of the VRF190. It is a gold-

metallized silicon n-channel RF power transistor designed for broadband

commercial and military applications requiring high power and gain without

compromising reliability, ruggedness, or inter-modulation distortion.