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ECH8201 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ECH8201 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() ECH8201 No. A1555-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA DC Current Gain hFE1VCE=2V, IC=500mA 200 560 hFE2VCE=2V, IC=4A 160 hFE3VCE=2V, IC=10A 110 Gain-Bandwidth Product fT VCE=10V, IC=1A 230 MHz Output Capacitance Cob VCB=10V, f=1MHz 60 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=6A, IB=300mA 65 100 mV VCE(sat)2 IC=2A, IB=40mA 40 75 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=5A, IB=250mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω 100 V V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V Turn-On Time ton See specified Test Circuit. 60 ns Storage Time tstg See specified Test Circuit. 305 ns Fall Time tf See specified Test Circuit. 17 ns Package Dimensions Electrical Connection unit : mm (typ) 7011A-005 Switching Time Test Circuit 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 1 4 85 0.15 0 t o 0.02 0.65 2.9 0.3 To p View Bo tto m View VR RB VCC=12V VBE= --5V IC=50IB1= --25IB2=5A + + 50Ω INPUT OUTPUT RL 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 876 5 123 4 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view |
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