ACE3400

Technology

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits, and low in-line power loss are needed

in a very small outline surface mount package.

Features

DS(ON)

Application

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±

20

V

4.5

3.5

A

Pulsed Drain Current

25

A

Continuous Source Current (Diode Conduction)

1.7

A

2.0

Power Dissipation

1.3

W

Operating Junction Temperature

150

Storage Temperature Range

Thermal Resistance-Junction to Ambient

90