CHA5295

24.5-26.5GHz High Power Amplifier

Ref. : DSCHA529522297 -24-Oct.-02

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = 6V Id #800mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

24.5

26.5

GHz

G

Small signal gain (1)

16

17

dB

∆G

Small signal gain flatness (1)

±1

dB

Is

Reverse isolation

50

dB

P1dB

Pulsed output power at 1dB compression (1)

29

30

dBm

P03

Output power at 3dB gain compression (1)

31

dBm

IP3

3

41

dBm

PAE

Power added efficiency at 1dB comp.

18

%

VSWRin

Input VSWR

3.5:1

VSWRout

Output VSWR

2:1

Tj

Junction temperature for 80°C backside

155

°C

Id

Bias current @ small signal

800

1000

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

(2) Value representative for CW on jig measurement.

(3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages)

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum drain bias voltage with Pin max=12dBm

+6.25

V

Id

Maximum drain bias current

1400

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Ig

Gate bias current

-5 to +5

mA

Vdg

Maximum drain to gate voltage (Vd - Vg)

+8.0

V

Pin

Maximum input power overdrive (2)

+15

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.