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CLD160 Datasheet(PDF) 1 Page - Clairex Technologies, Inc |
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CLD160 Datasheet(HTML) 1 Page - Clairex Technologies, Inc |
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1 / 1 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLD160 Large Active Area Silicon Planar photodiode 0.330 (8.38) 0.320 (8.13) 0.365 (9.27) 0.355 (9.02) 0.164 (4.17) 0.186 (4.72) 0.200 (5.08) 0.030 (0.76) nom 1.000 (25.4) min CATHODE (long lead) Case 12 Clairex Technologies, Inc. July, 2001 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • 100° acceptance angle • 860nm peak response • hermetically sealed TO-5 package • usable for visible through near-IR • RoHS compliant description The CLD160 is a 0.122" x 0.122" active area silicon photodiode mounted in a flat window TO-5 package. Wide acceptance angle permits use in IR air communications ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature....................................................................... -65°C to +150°C operating temperature................................................................... -65°C to +150°C lead soldering temperature (1) ......................................................................... 260°C reverse voltage ..................................................................................................30V continuous power dissipation (2) ...................................................................250mW notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 1.60mW/°C free air temperature to TA = +150°C. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. ® electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions ISC Short-circuit current(3) - 50 - µA VBIAS = 0V, Ee=5mW/cm2 ID Dark current - - 5.0 nA VR = 15V, Ee = 0 VO Open circuit voltage (3) - 0.35 - V Ee = 5mW/cm 2 VBR Reverse breakdown 25 - - V IR = 100µA CJ Junction capacitance - - 200 pF VBIAS=0V, f = 1MHz tr, tf Output rise and fall time(4) - - 12 µs RL = 1kΩ ΘHP Total angle at half sensitivity points - 100 - deg. notes: 3. Radiation source is a frosted tungsten lamp with color temperature of 2854K or equivalent. 4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm 2. (short lead) Revised 3/15/06 |
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