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TSM4N60CPRO Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4N60CPRO Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM4N60 600V N-Channel Power MOSFET 2/9 Version: A07 Thermal Performance Parameter Symbol Limit Unit TO-220 / TO-251 / TO-252 1.78 Thermal Resistance Junction to Case ITO-220 RӨJC 5 oC/W TO-220 / ITO-220 62.5 Thermal Resistance Junction to Ambient TO-251 / TO-252 RӨJA 100 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Breakdown Voltage Temperature Coefficient ID = 250uA Referenced to 25 oC ∆BVDSS / TJ -- 0.6 -- V/ oC Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ± 100 nA On Characteristics Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2 2.5 Ω Dynamic Characteristics Total Gate Charge Qg -- 15 20 Gate-Source Charge Qgs -- 2.8 -- Gate-Drain Charge VDS = 480V, ID = 4A, VGS = 10V Qgd -- 6.2 -- nC Input Capacitance Ciss -- 545 710 Output Capacitance Coss -- 60 80 Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss -- 8 11 pF Turn-On Delay Time td(on) -- 10 30 Turn-On Rise Time tr -- 35 80 Turn-Off Delay Time td(off) -- 45 100 Turn-Off Fall Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25Ω tf -- 40 90 nS Source-Drain Diode Ratings and Characteristics Continuous Source Current IS -- -- 4 Pulse Source Current Integral Reverse p-n Junction Diode in the MOSFET ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time trr -- 300 -- nS Reverse Recovery Charge IS = 4A, VGS = 0V dlF/dt=100A/us Qrr -- 2.2 -- uC Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. Essentially Independent of Operating Temperature. |
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