MRF8S7170NR3 datasheet(3/13 Pages) FREESCALE

Part #	MRF8S7170NR3

Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PDF	13 Pages

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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3 / 13 page

MRF8S7170NR3

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 728-768 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

182

—

IMD Symmetry @ 160 W PEP, Pout where IMD Third Order

Intermodulation

` 30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

MHz

Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg.

—

0.5

—

Gain Variation over Temperature

(-30

°C to +85°C)

ΔG

—

0.017

—

dB/

°C

Output Power Variation over Temperature

(-30

°C to +85°C)

ΔP1dB

—

0.0048

—

dBm/

°C

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