TPC8124

2009-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

TPC8124

Lithium Ion Battery Applications

Power Management Switch Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−40

V

−40

V

Gate-source voltage

−25/+20

V

DC

(Note 1)

−12

Drain current

Pulse (Note 1)

−48

A

Drain power dissipation (t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation (t

= 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

134

mJ

Avalanche current

(Note 1)

−12

A

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1, Note 2, Note 3 : See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4