HA06 datasheet(1/1 Pages) HUASHAN

Part #	HA06

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

General Purpose Amplifier.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Uni

t

Test Conditions

BVCEO

Collector-Emitter Breakdown Voltage

80

V

IC=1mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

4

V

IE=100μA，IC=0

HFE（1） DC Current Gain

50

VCE=1V, IC=10mA

HFE（2） DC Current Gain

50

VCE=1V, IC=100mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.25

V

IC=100mA, IB=10mA

VBE（on） Base-Emitter On Voltage

1.2

V

VCE=1V, IC=100mA

ICBO

Collector Cut-off Current

100

nA

VCB=80V, IE=0

ICEO

Collector Cut-off Current

100

nA

VCE=60V, IB=0

fT

Current Gain-Bandwidth Product

100

MHz

VCE=20V,IC=10mA, f=100MHz

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………625mW

VCBO——Collector-Base Voltage………………………………80V

VCEO——Collector-Emitter Voltage……………………………80V

VEBO——Emitter-Base Voltage………………………………4V

IC——Collector Current……………………………………500mA

1―Emitter，E

2―Base，B

3―Collector，C

TO-92

HA06

NPN SILICON TRANSISTOR

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HA06 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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