HFP730 datasheet(1/6 Pages) HUASHAN

Part #	HFP730

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

N-Channel Enhancement Mode Field Effect Transistor

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General Description

these power MOSFETs is designed for high voltage, high speed power

switching applications such as switching regulators, converters,

solenoid and relay drivers. And DC-DC&DC-AC Converters for

Telecom,Industrial and Consumer Environment

█

Features

•

5.5A, 400V, RDS(on) <1.0Ω@VGS = 10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF730

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Maximum Ratings（Ta=25℃ unless otherwise specified）

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Thermal Characteristics

Symbol

Items

TO-220

Unit

Rthj-case

Thermal Resistance Junction-case

Max 1.71

℃

/W

Rthj-amb

Thermal Resistance Junction-ambient

Max 62.5

℃

/W

Rth c-s

Thermal Resistance Case-sink

Typ 0.5

℃

/W

Tstg——Storage Temperature ------------------------------------------------------ -55~150℃

Tj ——Operating Junction Temperature -------------------------------------------------- 150℃

VDSS —— Drain-Source Voltage ----------------------------------------------------------400V

VDGR —— Drain-Gate Voltage (RGS=20kΩ) -------------------------------------------------------- 400V

VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V

ID —— Drain Current (Continuous) ------------------------------------------------------------------- 5.5A

PD —— Maximum Power Dissipation ------------------------------------------------------------- 73W

IAR —— Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A

EAS—— Single Pulse Avalanche Energy

(starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 330 mJ

EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 7.3mJ

HFP730

TO-220

1- G 2-D 3-S

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HFP730 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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