2N6989 datasheet(1/2 Pages) MICROSEMI

Part #	2N6989

Description	MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK

SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/559

Devices

Qualified Level

2N6989

2N6989U

2N6990

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

(1)

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

(3)

VCEO

50

Vdc

Collector-Base Voltage

(3)

VCBO

75

Vdc

Emitter-Base Voltage

(3)

VEBO

6.0

Vdc

Collector Current

(3)

IC

800

mAdc

Total Power Dissipation

@ TA = +25

0C

2N6989

(2)

2N6989U

(2)

2N6990

(2)

PD

1.5

1.0

0.4

W

Operating & Storage Junction Temperature Range

Top, Tstg

-65 to +200

0C

1) Maximum voltage between transistors shall be

≥ 500 Vdc

2) Derate linearly 8.57 mW/

0C above TA = +250C for 2N6989 and 2N6989U

Derate linearly 2.286 mW/

0C above TA = +250C for 2N6990

Ratings apply to total package.

3) Ratings apply to each transistor in the array.

TO- 116*

2N6989

20 PIN LEADLESS*

2N6989U

14 PIN FLAT PACK*

2N6990

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

V(BR)CEO

50

Vdc

Collector-Base Cutoff Current

VCB = 60 Vdc

VCB = 75 Vdc; Ic= 10 µAdc

ICBO

10

ηAdc

µAdc

Emitter-Base Cutoff Current

VEB = 4.0Vdc

VEB = 6.0Vdc; Ic= 10 µAdc

IEBO

10

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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