APT30GF60JCU2

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3 – 6

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

IGBT

0.81

Junction to Case Thermal Resistance

SiC chopper Diode

2.25

Junction to Ambient (IGBT & Diode)

20

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

-55

150

Max Lead Temp for Soldering:0.063” from case for 10 sec

300

°C

Torque

1.5

N.m

Wt

Package Weight

29.2

g

SOT-227 (ISOTOP

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Emitter terminals are shorted

internally. Current handling

capability is equal for either

Emitter terminal.

Typical IGBT Performance Curve

Cies

Cres

Coes

10

100

1000

10000

0

1020

304050

Capacitance vs Collector to Emitter Voltage

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

Operating Frequency vs Collector Current

hard

switching

ZCS

ZVS

0

40

80

120

160

200

240

280

0

1020

3040

50

D = 50%

Emitter

Gate

Collector

Cathode