APT58M50JCU2

www.microsemi.com

1- 5

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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ISOTOP

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Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

500

V

58

Continuous Drain Current

43

Pulsed Drain current

270

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

65

m

Ω

Maximum Power Dissipation

543

W

Avalanche current (repetitive and non repetitive)

42

A

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

•

Brake switch

Features

•

Power MOS 8™ MOSFET

-

-

Low input and Miller capacitance

-

Low gate charge

-

Avalanche energy rated

• SiC Schottky Diode

-

Zero reverse recovery

-

Zero forward recovery

-

Temperature Independent switching behavior

-

Positive temperature coefficient on VF

•

ISOTOP

•

Very low stray inductance

•

High level of integration

Benefits

•

Outstanding performance at high frequency

operation

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Easy paralleling due to positive TC of VCEsat

•

RoHS Compliant

ISOTOP

MOSFET + SiC chopper diode

Power module

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